Invention Grant
- Patent Title: High frequency power amplifier
- Patent Title (中): 高频功率放大器
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Application No.: US11870100Application Date: 2007-10-10
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Publication No.: US07733187B2Publication Date: 2010-06-08
- Inventor: Kazuki Tateoka , Masahiko Inamori , Haruhiko Koizumi
- Applicant: Kazuki Tateoka , Masahiko Inamori , Haruhiko Koizumi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: RatnerPrestia
- Priority: JP2006-279513 20061013
- Main IPC: H03F3/191
- IPC: H03F3/191

Abstract:
A small, high performance high frequency power amplifier enables easily adjusting and switching the impedance. The high frequency power amplifier module includes a first semiconductor chip including one or a plurality of high frequency amplification devices, and a second semiconductor chip including one or more high frequency matching circuit devices and one or more switching devices. The second semiconductor chip includes the matching circuit for a high frequency amplifier device. The second semiconductor chip also includes a circuit composed of a capacitance and a switching device connected in series or parallel to the capacitance. The switching device switches on or off so that the capacitance is connected or is not connected as a part of the matching circuit.
Public/Granted literature
- US20080088376A1 HIGH FREQUENCY POWER AMPLIFIER Public/Granted day:2008-04-17
Information query
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