Invention Grant
- Patent Title: CMOS image sensor having wide dynamic range
- Patent Title (中): CMOS图像传感器具有宽动态范围
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Application No.: US11390456Application Date: 2006-03-28
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Publication No.: US07733402B2Publication Date: 2010-06-08
- Inventor: Yoshitaka Egawa , Shinji Ohsawa
- Applicant: Yoshitaka Egawa , Shinji Ohsawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-104595 20050331
- Main IPC: H04N5/335
- IPC: H04N5/335

Abstract:
A solid-state image sensing device includes a pixel unit, analog-to-digital converter, controller, and adder. In the pixel unit, cells are two-dimensionally arranged on a semiconductor substrate. An output analog signal from the pixel unit is converted into a digital signal by the analog-to-digital converter and output. The controller controls the pixel unit and analog-to-digital converter, and causes the analog-to-digital converter to digitize a plurality of analog signals different in storage time in the pixel unit during the storage period of the electric charge of one frame. The adder adds digital signals corresponding to the analog signals different in storage time and output from the analog-to-digital converter.
Public/Granted literature
- US20060219866A1 CMOS image sensor having wide dynamic range Public/Granted day:2006-10-05
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