The defect inspection apparatus and method for determining an acceptable condition of a reticle/mask member with a pattern area to be developed on a semiconductor device includes determining a non-pattern area and designating an inspection target area within a non-pattern area. Light is scanned across the inspection target area and detected to provide representative signals. The representative signals are processed to define the status of foreign matter including size and location and further compared with predetermined values to determine the acceptability of the mask for continued production purposes.