Invention Grant
- Patent Title: MEMS cavity-coating layers and methods
- Patent Title (中): MEMS空腔涂层及方法
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Application No.: US11689430Application Date: 2007-03-21
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Publication No.: US07733552B2Publication Date: 2010-06-08
- Inventor: Ana R. Londergan , Bangalore R. Natarajan , Evgeni Gousev , James Randolph Webster , David Heald
- Applicant: Ana R. Londergan , Bangalore R. Natarajan , Evgeni Gousev , James Randolph Webster , David Heald
- Applicant Address: US CA San Diego
- Assignee: Qualcomm Mems Technologies, Inc
- Current Assignee: Qualcomm Mems Technologies, Inc
- Current Assignee Address: US CA San Diego
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: G02F1/00
- IPC: G02F1/00

Abstract:
Devices, methods, and systems comprising a MEMS device, for example, an interferometric modulator, that comprises a cavity in which a layer coats multiple surfaces. The layer is conformal or non-conformal. In some embodiments, the layer is formed by atomic layer deposition (ALD). Preferably, the layer comprises a dielectric material. In some embodiments, the MEMS device also exhibits improved characteristics, such as improved electrical insulation between moving electrodes, reduced stiction, and/or improved mechanical properties.
Public/Granted literature
- US20080231931A1 MEMS CAVITY-COATING LAYERS AND METHODS Public/Granted day:2008-09-25
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