Invention Grant
- Patent Title: Structure of embedded capacitor
- Patent Title (中): 嵌入式电容器的结构
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Application No.: US11860316Application Date: 2007-09-24
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Publication No.: US07733627B2Publication Date: 2010-06-08
- Inventor: Wan-Ling Yu
- Applicant: Wan-Ling Yu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01G4/228
- IPC: H01G4/228

Abstract:
The embedded capacitor of the present invention contains a power plate, a ground plate, and a dielectric layer vertically sandwiched between the power and ground plates. Both the power and ground plates are divided laterally into a number of smaller plates with appropriate gaps therebetween; and, as such, cracks in the dielectric layers are limited to happen between gaps only. The smaller plates are then electrically connected by connectors in the gaps. The connectors for the power plate and the connectors for the ground plate are not vertically overlapped so that they do not appear simultaneously at the two ends of the cracks simultaneously.
Public/Granted literature
- US20090080139A1 STRUCTURE OF EMBEDDED CAPACITOR Public/Granted day:2009-03-26
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