Invention Grant
US07733685B2 Cross point memory cell with distributed diodes and method of making same
有权
具有分布二极管的交叉点存储单元及其制造方法
- Patent Title: Cross point memory cell with distributed diodes and method of making same
- Patent Title (中): 具有分布二极管的交叉点存储单元及其制造方法
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Application No.: US12216678Application Date: 2008-07-09
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Publication No.: US07733685B2Publication Date: 2010-06-08
- Inventor: Roy E. Scheuerlein , Luca Fasoli
- Applicant: Roy E. Scheuerlein , Luca Fasoli
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Foley & Lardner LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A cross point memory cell includes a portion of a first distributed diode, a portion of a second distributed diode, a memory layer located between the portion of the first distributed diode and the portion of a second distributed diode, a bit line electrically connected to the first distributed diode, and a word line electrically connected to the second distributed diode.
Public/Granted literature
- US20100008124A1 Cross point memory cell with distributed diodes and method of making same Public/Granted day:2010-01-14
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