Invention Grant
US07733698B2 Memory device, a non-volatile semiconductor memory device and a method of forming a memory device
有权
存储器件，非易失性半导体存储器件和形成存储器件的方法
- Patent Title: Memory device, a non-volatile semiconductor memory device and a method of forming a memory device
- Patent Title (中): 存储器件，非易失性半导体存储器件和形成存储器件的方法
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Application No.: US11688949Application Date: 2007-03-21
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Publication No.: US07733698B2Publication Date: 2010-06-08
- Inventor: Joachim Deppe , Dominik Olligs , Christoph Kleint , Eike Ruttkowski , Ricardo Mikalo
- Applicant: Joachim Deppe , Dominik Olligs , Christoph Kleint , Eike Ruttkowski , Ricardo Mikalo
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A memory device having an array portion including memory cells, and a peripheral portion including conductive lines is disclosed. In one embodiment, portions of the conductive lines adjoin a surface of a semiconductor carrier.
Public/Granted literature
- US20080232170A1 MEMORY DEVICE, A NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF FORMING A MEMORY DEVICE Public/Granted day:2008-09-25
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