Invention Grant
US07733715B2 Memory system, memory device, and output data strobe signal generating method
失效
存储器系统,存储器件和输出数据选通信号生成方法
- Patent Title: Memory system, memory device, and output data strobe signal generating method
- Patent Title (中): 存储器系统,存储器件和输出数据选通信号生成方法
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Application No.: US12071347Application Date: 2008-02-20
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Publication No.: US07733715B2Publication Date: 2010-06-08
- Inventor: Kwang-Il Park , Seong-Jin Jang , Ho-Young Song
- Applicant: Kwang-Il Park , Seong-Jin Jang , Ho-Young Song
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR2004-83745 20041019
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
An output data strobe signal generating method and a memory system that includes a plurality of semiconductor memory devices, and a memory controller for controlling the semiconductor memory devices, wherein the memory controller provides a command signal and a chip selecting signal to the semiconductor memory devices. One or more of the semiconductor memory devices may detect a read command and a dummy read command in response to the command signal and the chip selecting signal and generate one or more preamble signals based on a calculated preamble cycle number.
Public/Granted literature
- US20080144406A1 Memory system, memory device, and output data strobe signal generating method Public/Granted day:2008-06-19
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