Invention Grant
US07733735B2 Semiconductor storage device incorporated into a system LSI with finer design rules
有权
半导体存储装置结合到具有更精细设计规则的系统LSI中
- Patent Title: Semiconductor storage device incorporated into a system LSI with finer design rules
- Patent Title (中): 半导体存储装置结合到具有更精细设计规则的系统LSI中
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Application No.: US12115921Application Date: 2008-05-06
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Publication No.: US07733735B2Publication Date: 2010-06-08
- Inventor: Kenichi Origasa
- Applicant: Kenichi Origasa
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Steptoe & Johnson LLP
- Priority: JP2007-133578 20070521
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
In the present invention, a row decoder circuit is made up of a transistor having a first gate oxide film thickness, a transistor having a second gate oxide film thickness, and a transistor having a third gate oxide film thickness. Thus even a control circuit at a lower voltage can drive word lines at high speeds while achieving reliability.
Public/Granted literature
- US20080291717A1 SEMICONDUCTOR STORAGE DEVICE INCORPORATED INTO A SYSTEM LSI WITH FINER DESIGN RULES Public/Granted day:2008-11-27
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