Invention Grant
US07733738B2 Semiconductor memory device and a data write and read method thereof
有权
半导体存储器件及其数据写入和读取方法
- Patent Title: Semiconductor memory device and a data write and read method thereof
- Patent Title (中): 半导体存储器件及其数据写入和读取方法
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Application No.: US11348787Application Date: 2006-02-07
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Publication No.: US07733738B2Publication Date: 2010-06-08
- Inventor: Yoon-Hwan Yoon
- Applicant: Yoon-Hwan Yoon
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2005-0011439 20050207
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
Provided are a semiconductor memory device and a data write and read method thereof. The semiconductor memory device includes a write data controller, an address controller, and a read data controller. The write data controller writes data received with an address to a first memory cell corresponding to the address and simultaneously stores the data in a data register. The address controller decodes and stores the address in an address register. The read data controller outputs data from a second memory cell corresponding to an address received with a data read command if the received address is different from the address stored in the address register, and outputs the data stored in the data register if the received address is equal to the address stored in the address register.
Public/Granted literature
- US20060179260A1 Semiconductor memory device and a data write and read method thereof Public/Granted day:2006-08-10
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