Semiconductor device and method of fabricating the same

Invention Grant

US07736971B2 Semiconductor device and method of fabricating the same 失效

Title translation: 半导体装置及其制造方法

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Patent Title: Semiconductor device and method of fabricating the same
Patent Title (中): 半导体装置及其制造方法
Application No.: US11966399

Application Date: 2007-12-28
Publication No.: US07736971B2

Publication Date: 2010-06-15
Inventor: Jung Tak Suh
Applicant: Jung Tak Suh
Applicant Address: KR Icheon-si
Assignee: Hynix Semiconductor Inc.
Current Assignee: Hynix Semiconductor Inc.
Current Assignee Address: KR Icheon-si
Agency: Townsend and Townsend and Crew LLP
Priority: KR10-2007-0109840 20071030
Main IPC: H01L21/8242
IPC: H01L21/8242

Semiconductor device and method of fabricating the same

Abstract:

A method of fabricating a semiconductor device includes forming a first interlayer insulating film including a storage node contact plug over a semiconductor substrate. A second interlayer insulating film is formed over the first interlayer insulating film and the storage node contact plug. A mask pattern is formed over the second interlayer insulating film to expose a storage node region. The second interlayer insulating film and the first interlayer insulating film is selectively etched to form a recess exposing a portion of the storage node contact plug. A lower storage node is formed in the recess. The storage node includes a concave structure that surrounds the exposed storage node contact plug. A dip-out process is performed to remove the second interlayer insulating film. A dielectric film is formed over the semiconductor substrate including the lower storage node. A plate electrode is deposited over the dielectric film to form a capacitor.

Abstract(Chinese):

制造半导体器件的方法包括在半导体衬底上形成包括存储节点接触插塞的第一层间绝缘膜。在第一层间绝缘膜和存储节点接触插塞上形成第二层间绝缘膜。在第二层间绝缘膜上形成掩模图案以露出存储节点区域。选择性地蚀刻第二层间绝缘膜和第一层间绝缘膜以形成暴露存储节点接触插塞的一部分的凹部。下部存储节点形成在凹部中。存储节点包括围绕暴露的存储节点接触插头的凹形结构。执行汲取处理以去除第二层间绝缘膜。在包括下存储节点的半导体衬底上形成电介质膜。在电介质膜上沉积平板电极以形成电容器。

Public/Granted literature

US20090108317A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-04-30

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）