Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12122424Application Date: 2008-05-16
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Publication No.: US07737511B2Publication Date: 2010-06-15
- Inventor: Kouichi Muraoka , Kazuaki Kurihara
- Applicant: Kouichi Muraoka , Kazuaki Kurihara
- Applicant Address: JP Tokyo
- Assignee: Kabushikik Kaisha Toshiba
- Current Assignee: Kabushikik Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2001-295367 20010927; JP2002-094149 20020329
- Main IPC: H01L27/088
- IPC: H01L27/088
Abstract:
There is provided a method of manufacturing a semiconductor device, including forming a structure including a first layer containing Si and a metal oxide layer in contact with the first layer, the metal oxide layer having a dielectric constant higher than that of silicon oxide, and heating the structure in an atmosphere containing He and/or Ne.
Public/Granted literature
- US20080217706A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2008-09-11
Information query
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