Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11395599Application Date: 2006-03-30
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Publication No.: US07737523B2Publication Date: 2010-06-15
- Inventor: Shuichi Kikuchi , Shigeaki Okawa , Kiyofumi Nakaya , Toshiyuki Takahashi
- Applicant: Shuichi Kikuchi , Shigeaki Okawa , Kiyofumi Nakaya , Toshiyuki Takahashi
- Applicant Address: JP Osaka
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Fish & Richardson P.C.
- Priority: JPP2005-098965 20050330; JPP2006-064619 20060309
- Main IPC: H01L29/93
- IPC: H01L29/93
Abstract:
In a semiconductor device of the present invention, a protection diode for protecting a device is formed on an epitaxial layer formed on a substrate. A Schottky barrier metal layer is formed on a surface of the epitaxial layer and a P-type diffusion layer is formed at a lower portion of an end portion of the Schottky barrier metal layer. Then, a P-type diffusion layer is formed to be connected to a P-type diffusion layer and is extended to a cathode region. A metal layer to which an anode electrode is applied is formed above the P-type diffusion layer, thereby making it possible to obtain a field plate effect. This structure reduces a large change in a curvature of a depletion layer, thereby improving a withstand voltage characteristic of the protection diode.
Public/Granted literature
- US20060220166A1 Semiconductor device Public/Granted day:2006-10-05
Information query
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