Invention Grant
US07737551B2 Semiconductor power module with SiC power diodes and method for its production
有权
具有SiC功率二极管的半导体功率模块及其生产方法
- Patent Title: Semiconductor power module with SiC power diodes and method for its production
- Patent Title (中): 具有SiC功率二极管的半导体功率模块及其生产方法
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Application No.: US11428479Application Date: 2006-07-03
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Publication No.: US07737551B2Publication Date: 2010-06-15
- Inventor: Ralf Otremba
- Applicant: Ralf Otremba
- Applicant Address: DE Munich
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Munich
- Agency: Banner & Witcoff, Ltd.
- Priority: DE102005031836 20050706
- Main IPC: H01L23/34
- IPC: H01L23/34
Abstract:
A semiconductor power module has at least one power semiconductor chip (2) which can be controlled by the field effect and has a plurality of fail-safe, small-area SiC power diodes (D1 to D8). The function of a large-area SiC power diode chip which is susceptible to failure is distributed over these small-area, parallel-connected SiC power diode chips (D1 to D8) in such a way that their total area of active SiC diode areas (F1 to F8) corresponds to an area extent of a large-area non-fail-safe SiC power diode chip.
Public/Granted literature
- US20070013059A1 Semiconductor power module with SIC power diodes and method for its production Public/Granted day:2007-01-18
Information query
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