Invention Grant
US07737748B2 Level shifter of semiconductor device and method for controlling duty ratio in the device
有权
半导体器件的电平移位器和装置中占空比的控制方法
- Patent Title: Level shifter of semiconductor device and method for controlling duty ratio in the device
- Patent Title (中): 半导体器件的电平移位器和装置中占空比的控制方法
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Application No.: US11986841Application Date: 2007-11-27
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Publication No.: US07737748B2Publication Date: 2010-06-15
- Inventor: Jin-Gook Kim , Seung-Jun Bae , Dae-Hyun Chung
- Applicant: Jin-Gook Kim , Seung-Jun Bae , Dae-Hyun Chung
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello, LLP
- Priority: KR10-2007-0010615 20070201
- Main IPC: H03K3/017
- IPC: H03K3/017

Abstract:
A level shifter of a semiconductor device and method of controlling a duty ratio are provided. The level shifter includes first and second PMOS transistors having sources to which a power supply voltage is applied, first and second NMOS transistors having sources to which a ground voltage is applied, third and fourth NMOS transistors having sources connected to drains of the first and second NMOS transistors and gates to which the power supply voltage is applied; and a voltage controlled delay unit for receiving an input signal applied to a gate of the first NMOS transistor, inverting a level of the input signal, determining whether a voltage of an inverted input signal should be charged in response to a voltage control signal, outputting the voltage of the inverted input signal of which delay time is controlled, and applying the inverted input signal to a gate of the second NMOS transistor.
Public/Granted literature
- US20080186075A1 Level shifter of semiconductor device and method for controlling duty ratio in the device Public/Granted day:2008-08-07
Information query
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