Invention Grant
- Patent Title: Semiconductor memory device with stores plural data in a cell
- Patent Title (中): 具有在单元中存储多个数据的半导体存储器件
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Application No.: US12117767Application Date: 2008-05-09
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Publication No.: US07738302B2Publication Date: 2010-06-15
- Inventor: Noboru Shibata , Tomoharu Tanaka
- Applicant: Noboru Shibata , Tomoharu Tanaka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-024475 20040130; JP2004-160165 20040528
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A memory cell array is configured to have a plurality of memory cells arranged in a matrix, each of the memory cells being connected to a word line and a bit line and being capable of storing n values (n is a natural number equal to or larger than 3). A control circuit controls the potentials of the word line and bit line according to input data and writes data into a memory cell. The control circuit writes data into the memory cell to a k-valued threshold voltage (k
Public/Granted literature
- US20080219058A1 SEMICONDUCTOR MEMORY DEVICE WHICH STORES PLURAL DATA IN A CELL Public/Granted day:2008-09-11
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