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US07738302B2 Semiconductor memory device with stores plural data in a cell 有权
具有在单元中存储多个数据的半导体存储器件

Semiconductor memory device with stores plural data in a cell
Abstract:
A memory cell array is configured to have a plurality of memory cells arranged in a matrix, each of the memory cells being connected to a word line and a bit line and being capable of storing n values (n is a natural number equal to or larger than 3). A control circuit controls the potentials of the word line and bit line according to input data and writes data into a memory cell. The control circuit writes data into the memory cell to a k-valued threshold voltage (k
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