Invention Grant
US07741213B2 Semiconductor device, DRAM integrated circuit device, and method of producing the same
有权
半导体装置，DRAM集成电路装置及其制造方法
- Patent Title: Semiconductor device, DRAM integrated circuit device, and method of producing the same
- Patent Title (中): 半导体装置，DRAM集成电路装置及其制造方法
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Application No.: US12285848Application Date: 2008-10-15
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Publication No.: US07741213B2Publication Date: 2010-06-22
- Inventor: Taiji Ema
- Applicant: Taiji Ema
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2002-380637 20021227
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
A semiconductor device with a multi-layer wiring structure includes a first conductive region: a second conductive region that has an upper surface located in a higher position than the first conductive region with respect to the substrate; an insulating that covers the first and second conductive regions; a wiring groove that is formed in the insulating film so as to expose the second conductive region; a contact hole that is formed in the insulating film so as to expose the first conductive region; and a wiring pattern that fills the wiring groove and the contact hole. In this semiconductor device, the upper surface of the wiring pattern is located on the same plane as the upper surface of the insulating film.
Public/Granted literature
- US20090121318A1 Semiconductor device, DRAM integrated circuit device, and method of producing the same Public/Granted day:2009-05-14
Information query
IPC分类:
