Invention Grant
US07741671B2 Capacitor for a semiconductor device and manufacturing method thereof
失效
一种用于半导体器件的电容器及其制造方法
- Patent Title: Capacitor for a semiconductor device and manufacturing method thereof
- Patent Title (中): 一种用于半导体器件的电容器及其制造方法
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Application No.: US12358175Application Date: 2009-01-22
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Publication No.: US07741671B2Publication Date: 2010-06-22
- Inventor: Pyeong Won Oh , Woo Jin Kim , Hoon Jung Oh , Hyo Gun Yoon , Hyo Seob Yoon , Baik II Choi
- Applicant: Pyeong Won Oh , Woo Jin Kim , Hoon Jung Oh , Hyo Gun Yoon , Hyo Seob Yoon , Baik II Choi
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2004-0111387 20041223
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Disclosed is a capacitor for a semiconductor device, comprising: a lower electrode formed over a predetermined lower structure on a semiconductor substrate; an aluminum oxynitride film formed over the lower electrode and having a low leakage current characteristic; a yttrium oxynitride film formed over the aluminum oxynitride film and having a higher dielectric constant than the aluminum oxynitride film; and an upper electrode formed over the yttrium oxynitride film, and a manufacturing method thereof.
Public/Granted literature
- US20090122461A1 CAPACITOR FOR A SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2009-05-14
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