Invention Grant
- Patent Title: Semiconductor photodetector
- Patent Title (中): 半导体光电探测器
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Application No.: US12204910Application Date: 2008-09-05
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Publication No.: US07741691B2Publication Date: 2010-06-22
- Inventor: Matobu Kikuchi
- Applicant: Matobu Kikuchi
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2008-117603 20080428
- Main IPC: H01L31/0232
- IPC: H01L31/0232

Abstract:
A semiconductor photodetector includes a semiconductor substrate of a first conductivity type, a light absorption layer of the first conductivity type on the semiconductor substrate and absorbing light, a diffraction grating layer on the light absorption layer and including a diffraction grating diffracting light, a first light transmissive layer of a second conductivity type on the diffraction grating layer and transmitting light, and a second light transmissive layer of the first conductivity type on the diffraction grating layer and surrounding the first light transmissive layer, the second light transmissive layer transmitting light. The diffraction grating surrounds a region of the diffraction grating layer that is directly below the first light transmissive layer.
Public/Granted literature
- US20090267169A1 SEMICONDUCTOR PHOTODETECTOR Public/Granted day:2009-10-29
Information query
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