Invention Grant
- Patent Title: Semiconductor structure formed using a sacrificial structure
- Patent Title (中): 使用牺牲结构形成的半导体结构
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Application No.: US11927978Application Date: 2007-10-30
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Publication No.: US07741702B2Publication Date: 2010-06-22
- Inventor: Bailey R. Jones , Sean Lian , Simon John Molloy
- Applicant: Bailey R. Jones , Sean Lian , Simon John Molloy
- Applicant Address: US PA Allentown
- Assignee: Agere Systems Inc.
- Current Assignee: Agere Systems Inc.
- Current Assignee Address: US PA Allentown
- Agency: Ryan, Mason & Lewis, LLP
- Main IPC: H01L23/552
- IPC: H01L23/552

Abstract:
A semiconductor structure is provided which eliminates the contact resistance traditionally associated with a junction between one or more contacts and a buried conductive structure formed in the semiconductor structure. The semiconductor structure includes a first insulating layer formed on a semiconductor layer and a conductive structure formed on at least a portion of the first insulating layer. A second insulating layer is formed on at least a portion of the conductive structure. At least one contact is formed through the second insulating layer and electrically connected to the conductive structure. The contact and the conductive structure are formed as a substantially homogeneous structure in a same processing step.
Public/Granted literature
- US20080054481A1 Semiconductor Structure Formed Using a Sacrificial Structure Public/Granted day:2008-03-06
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