Invention Grant
US07741987B2 Dual gate oxide analog circuit architecture with dual voltage supplies and associated method 有权
双栅氧化物模拟电路架构采用双电源及相关方式

Dual gate oxide analog circuit architecture with dual voltage supplies and associated method
Abstract:
An analog circuit architecture is fabricated with dual gate oxides and dual voltage supplies. In the analog circuit architecture, different kinds of devices/transistors with different gate oxide thicknesses are biased by different voltages, such that advantages of each device technology are mixed to enhance total performance of the analog circuit. For example, thin oxide 0.18 um transistors are biased at 1.8V for higher speed and lower power consumption, whereas thick oxide 0.35 um transistors are biased at 3.3V for a wider signal swing range.
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