Invention Grant
- Patent Title: Dual gate oxide analog circuit architecture with dual voltage supplies and associated method
- Patent Title (中): 双栅氧化物模拟电路架构采用双电源及相关方式
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Application No.: US12328770Application Date: 2008-12-05
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Publication No.: US07741987B2Publication Date: 2010-06-22
- Inventor: Henry Tin-Hang Yung , Chao-Ping Huang , Steve Wiyi Yang
- Applicant: Henry Tin-Hang Yung , Chao-Ping Huang , Steve Wiyi Yang
- Applicant Address: TW ChuPei, Hsin-Chu Hsien
- Assignee: MStar Semiconductor, Inc.
- Current Assignee: MStar Semiconductor, Inc.
- Current Assignee Address: TW ChuPei, Hsin-Chu Hsien
- Agent Winston Hsu
- Main IPC: H03M1/38
- IPC: H03M1/38

Abstract:
An analog circuit architecture is fabricated with dual gate oxides and dual voltage supplies. In the analog circuit architecture, different kinds of devices/transistors with different gate oxide thicknesses are biased by different voltages, such that advantages of each device technology are mixed to enhance total performance of the analog circuit. For example, thin oxide 0.18 um transistors are biased at 1.8V for higher speed and lower power consumption, whereas thick oxide 0.35 um transistors are biased at 3.3V for a wider signal swing range.
Public/Granted literature
- US20090079604A1 Dual Gate Oxide Analog Circuit Architecture With Dual Voltage Supplies and Associated Method Public/Granted day:2009-03-26
Information query
IPC分类: