Invention Grant
- Patent Title: Method for puncturing low density parity check code
- Patent Title (中): 打孔低密度奇偶校验码的方法
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Application No.: US11367521Application Date: 2006-03-03
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Publication No.: US07743312B2Publication Date: 2010-06-22
- Inventor: Eoi-Young Choi , Seung-Bum Suh
- Applicant: Eoi-Young Choi , Seung-Bum Suh
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2005-0018376 20050304
- Main IPC: H03M13/03
- IPC: H03M13/03

Abstract:
A method is provided for puncturing a low density parity check (LDPC) code decoded by a parity check matrix that is expressed by a factor graph including a check node and a bit node, being connected to each other at an edge, and includes a parity part having a dual diagonal matrix with a single 3-weight column and the remaining columns being 2-weight columns. The method includes generating a puncturing pattern such that bits of the LDPC code are punctured in an order of a bit mapped to a column with a higher weight from among the columns constituting the parity part; and puncturing the LDPC code according to the generated puncturing pattern.
Public/Granted literature
- US20060206781A1 Method for puncturing low density parity check code Public/Granted day:2006-09-14
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