Invention Grant
- Patent Title: Differential negative resistance memory
- Patent Title (中): 差分负电阻记忆
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Application No.: US12003573Application Date: 2007-12-28
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Publication No.: US07745808B2Publication Date: 2010-06-29
- Inventor: Kristy A. Campbell
- Applicant: Kristy A. Campbell
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L47/00
- IPC: H01L47/00

Abstract:
The invention relates to a DNR (differential negative resistance) exhibiting device that can be programmed to store information as readable current amplitudes and to methods of making such a device. The stored data is semi-volatile. Generally, information written to a device in accordance with the invention can maintain its memory for a matter of minutes, hours, or days before a refresh is necessary. The power requirements of the device are far reduced compared to DRAM. The memory function of the device is highly stable, repeatable, and predictable. The device can be produced in a variety of ways.
Public/Granted literature
- US20080128674A1 Differential negative resistance memory Public/Granted day:2008-06-05
Information query
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