Invention Grant
- Patent Title: Solid-state image sensing apparatus and fabrication method thereof
- Patent Title (中): 固态摄像装置及其制造方法
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Application No.: US11651022Application Date: 2007-01-09
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Publication No.: US07745859B2Publication Date: 2010-06-29
- Inventor: Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa , Kazunari Koga
- Applicant: Tatsuya Hirata , Shouzi Tanaka , Ryohei Miyagawa , Kazunari Koga
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-113171 20060417
- Main IPC: H01L31/062
- IPC: H01L31/062 ; H01L31/113
Abstract:
A solid-state image sensing apparatus has a signal storage portion of a second conductivity type provided within a substrate, a surface shield layer of the first conductivity type provided in a surface portion of the substrate which is located above the signal storage portion, a gate electrode provided over the substrate in adjacent relation to at least one end of the signal storage portion, and a drain region of the second conductivity type provided in a surface portion of the substrate which is on the side opposite to the surface shield layer when viewed from the gate electrode. A read control layer of the first conductivity type is further provided in a surface portion of the substrate which is located under the gate electrode in adjacent relation to one end of the surface shield layer.
Public/Granted literature
- US20070241374A1 Solid-state image sensing apparatus and fabrication method therefor Public/Granted day:2007-10-18
Information query
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