Invention Grant
- Patent Title: Magnetic transistor structure
- Patent Title (中): 磁晶体管结构
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Application No.: US11539284Application Date: 2006-10-06
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Publication No.: US07745893B2Publication Date: 2010-06-29
- Inventor: James Chyi Lai , Tom Allen Agan
- Applicant: James Chyi Lai , Tom Allen Agan
- Applicant Address: US MI St. Paul
- Assignee: Northern Lights Semiconductor Corp.
- Current Assignee: Northern Lights Semiconductor Corp.
- Current Assignee Address: US MI St. Paul
- Agency: Thomas, Kayden, Horstemeyer & Risley
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A magnetic transistor includes a first magnetic section, a second magnetic section, a conductive section, a first metal terminal, and a second metal terminal. The conductive section is disposed between and is in direct contact with both the first and second magnetic section. The first metal terminal is disposed on one end of an opposite surface to the conductive section of the first magnetic section. The second metal terminal is disposed on one end approximately diagonal to the first metal terminal on an opposite surface to the conductive section of the second magnetic section. While the magnetic transistor structure is turned on, a current flows through the first magnetic section and the second magnetic section via the conductive section.
Public/Granted literature
- US20070152254A1 Magnetic Transistor Structure Public/Granted day:2007-07-05
Information query
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