Invention Grant
US07746121B2 Ultra low power LVDS driver with built in impedance termination to supply and ground rails
失效
超低功耗LVDS驱动器,内置阻抗端接电源和接地导轨
- Patent Title: Ultra low power LVDS driver with built in impedance termination to supply and ground rails
- Patent Title (中): 超低功耗LVDS驱动器,内置阻抗端接电源和接地导轨
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Application No.: US11587104Application Date: 2005-04-19
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Publication No.: US07746121B2Publication Date: 2010-06-29
- Inventor: Elie G. Khoury , DC Sessions
- Applicant: Elie G. Khoury , DC Sessions
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- International Application: PCT/IB2005/051281 WO 20050419
- International Announcement: WO2005/104374 WO 20051103
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
A novel high speed, >1 GHz or 2 Gbits/s, low voltage differential signal (LVDS) driver is disclosed. The LVDS design achieves low power consumption while providing LVDS compliant impedance termination to power supply and ground. An output stage of the LVDS is implemented using a Nmos and a Pmos follower in a push pull configuration. This new design relies first on a follower type of an output stage, which provides the inherent impedance termination, second on an AC, capacitive, coupling and DC restoration to drive output stage gates, and on a low power dummy bias generator that supplies DC restoration voltages. As the supply voltage is lower the thick oxide devices performance suffer, therefore for this new design is mainly implemented with thin oxide devices.
Public/Granted literature
- US20080191784A1 Ac Coupling And Gate Charge Pumping For Nmos And Pmos Device Control Public/Granted day:2008-08-14
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