Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12146964Application Date: 2008-06-26
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Publication No.: US07746147B2Publication Date: 2010-06-29
- Inventor: Masahide Kiritani , Noriko Sonoda
- Applicant: Masahide Kiritani , Noriko Sonoda
- Applicant Address: JP Tokyo
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-171472 20070629
- Main IPC: H03L5/00
- IPC: H03L5/00
Abstract:
A level shifter circuit of the present invention includes a level shifter for converting a low-voltage signal to a high-voltage signal, and is provided with a unit that sets a voltage condition of an input signal to a transistor for input of the level shifter, when a high-voltage power supply is inputted to the level shifter circuit of the present invention before a low-voltage power supply.
Public/Granted literature
- US20090002052A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-01-01
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