Invention Grant
US07746161B2 Semiconductor integrated circuit device having internal voltage generating circuit
失效
具有内部电压发生电路的半导体集成电路装置
- Patent Title: Semiconductor integrated circuit device having internal voltage generating circuit
- Patent Title (中): 具有内部电压发生电路的半导体集成电路装置
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Application No.: US11984051Application Date: 2007-11-13
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Publication No.: US07746161B2Publication Date: 2010-06-29
- Inventor: Toshiharu Okamoto
- Applicant: Toshiharu Okamoto
- Applicant Address: JP Kawasaki, Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2006-320280 20061128
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
A semiconductor device includes a first voltage generator which outputs a first signal to a first node, a second voltage generator which outputs a second signal to a second node, a capacitor coupled between the first and second nodes; and a current supply circuit coupled to said second node. While the first voltage generator outputs the first signal to set the first node to a first voltage potential, the second voltage generator is activated to output the second signal to set the second node to a second voltage potential. At that time, the capacitor influences to the second node, based on a coupling capacitance thereof and the current supplying circuit supplies a current to suppress the influence.
Public/Granted literature
- US20080122527A1 Semiconductor integrated circuit device having internal voltage generating circuit Public/Granted day:2008-05-29
Information query
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