Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US10352233Application Date: 2003-01-28
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Publication No.: US07749818B2Publication Date: 2010-07-06
- Inventor: Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi , Mai Akiba
- Applicant: Atsuo Isobe , Shunpei Yamazaki , Chiho Kokubo , Koichiro Tanaka , Akihisa Shimomura , Tatsuya Arao , Hidekazu Miyairi , Mai Akiba
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2002-019286 20020128; JP2002-027382 20020204; JP2002-027492 20020204; JP2002-118154 20020419
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/84
Abstract:
An objective is to provide a method of manufacturing a semiconductor device, and a semiconductor device manufactured by using the manufacturing method, in which a laser crystallization method is used that is capable of preventing the formation of grain boundaries in TFT channel formation regions, and is capable of preventing conspicuous drops in TFT mobility, reduction in the ON current, and increases in the OFF current, all due to grain boundaries. Stripe shape or rectangular shape unevenness or opening is formed. Continuous wave laser light is then irradiated to a semiconductor film formed on an insulating film. Note that although it is most preferable to use continuous wave laser light at this point, pulse wave oscillation laser light may also be used.
Public/Granted literature
- US20030218171A1 Semiconductor device and method of manufacturing the same Public/Granted day:2003-11-27
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