Invention Grant
- Patent Title: Thin film transistor array panel and manufacturing method thereof
- Patent Title (中): 薄膜晶体管阵列面板及其制造方法
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Application No.: US11192208Application Date: 2005-07-27
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Publication No.: US07749824B2Publication Date: 2010-07-06
- Inventor: Dong-Gyu Kim
- Applicant: Dong-Gyu Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Innovation Counsel LLP
- Priority: KR10-2004-0058707 20040727
- Main IPC: H01L21/84
- IPC: H01L21/84

Abstract:
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming an ohmic contact on the semiconductor layer; forming a data line and a drain electrode on the ohmic contact; depositing a passivation layer on the data line and the drain electrode; forming a first photoresist layer on the passivation layer; etching the passivation layer and the gate insulating layer using the first photoresist layer as a mask to expose a portion of the drain electrode and a portion of the substrate; depositing a conductive film; and removing the photoresist layer; to form a pixel electrode on a portion of the drain electrode exposed by the etching of the passivation layer.
Public/Granted literature
- US20060024895A1 Thin film transistor array panel and manufacturing method thereof Public/Granted day:2006-02-02
Information query
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