Invention Grant
US07749864B2 Semiconductor device with a thinned semiconductor chip and method for producing the thinned semiconductor chip
有权
具有减薄的半导体芯片的半导体器件和用于制造变薄的半导体芯片的方法
- Patent Title: Semiconductor device with a thinned semiconductor chip and method for producing the thinned semiconductor chip
- Patent Title (中): 具有减薄的半导体芯片的半导体器件和用于制造变薄的半导体芯片的方法
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Application No.: US11866853Application Date: 2007-10-03
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Publication No.: US07749864B2Publication Date: 2010-07-06
- Inventor: Michael Bauer , Ludwig Heitzer , Jens Pohl , Peter Strobel , Christian Stuempfl
- Applicant: Michael Bauer , Ludwig Heitzer , Jens Pohl , Peter Strobel , Christian Stuempfl
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
A semiconductor device with a thinned semiconductor chip and a method for producing the latter is disclosed. In one embodiment, the thinned semiconductor chip has a top side with contact areas and a rear side with a rear side electrode. In this case, the rear side electrode is cohesively connected to a chip pad of a circuit carrier via an electrically conductive layer. In another embodiment, the thinned semiconductor chips of this semiconductor device according to the invention have low-microdefect edge side regions with semiconductor element structures and edge sides patterned by etching technology.
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