Invention Grant
- Patent Title: Method of cutting processed object
- Patent Title (中): 切割加工对象的方法
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Application No.: US10507340Application Date: 2003-03-11
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Publication No.: US07749867B2Publication Date: 2010-07-06
- Inventor: Fumitsugu Fukuyo , Kenshi Fukumitsu
- Applicant: Fumitsugu Fukuyo , Kenshi Fukumitsu
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2002-067372 20020312
- International Application: PCT/JP03/02867 WO 20030311
- International Announcement: WO03/076119 WO 20030918
- Main IPC: H01L21/301
- IPC: H01L21/301

Abstract:
A method of cutting an object which can accurately cut the object is provided. An object to be processed 1 such as a silicon wafer is irradiated with laser light L while a light-converging point P is positioned therewithin, so as to form a modified region 7 due to multiphoton absorption within the object 1, and cause the modified region 7 to form a starting point region for cutting 8 shifted from the center line CL of the thickness of the object 1 toward the front face 3 of the object 1 along a line along which the object should be cut. Subsequently, the object 1 is pressed from the rear face 21 side thereof. This can generate a fracture from the starting point region for cutting 8 acting as a start point, thereby accurately cutting the object 1 along the line along which the object should be cut.
Public/Granted literature
- US20060011593A1 Method of cutting processed object Public/Granted day:2006-01-19
Information query
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