Invention Grant
US07749869B2 Crystalline silicon substrates with improved minority carrier lifetime including a method of annealing and removing SiOx precipitates and getterning sites
失效
具有改善的少数载流子寿命的晶体硅衬底，包括退火和除去SiO x沉淀物和起始位点的方法
- Patent Title: Crystalline silicon substrates with improved minority carrier lifetime including a method of annealing and removing SiOx precipitates and getterning sites
- Patent Title (中): 具有改善的少数载流子寿命的晶体硅衬底，包括退火和除去SiO x沉淀物和起始位点的方法
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Application No.: US12186243Application Date: 2008-08-05
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Publication No.: US07749869B2Publication Date: 2010-07-06
- Inventor: Joel P. De Souza , Harold John Hovel , Daniel A. Inns , Devendra K. Sadana , Ghavam G. Shahidi
- Applicant: Joel P. De Souza , Harold John Hovel , Daniel A. Inns , Devendra K. Sadana , Ghavam G. Shahidi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L21/302 ; H01L21/461
Abstract:
A method for improving the minority lifetime of silicon containing wafer having metallic contaminants therein is described incorporating annealing at 1200° C. or greater and providing a gaseous ambient of oxygen, an inert gas and a chlorine containing gas such as HCl.
Public/Granted literature
- US20100035409A1 CRYSTALLINE SILICON SUBSTRATES WITH IMPROVED MINORITY CARRIER LIFETIME Public/Granted day:2010-02-11
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