Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devices

Invention Grant

US07749892B2 Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devices 失效

Title translation: 嵌入式纳米UV阻挡和扩散屏障，提高铜/超低K层间电介质电子器件的可靠性

Please log in to see more content

Patent Title: Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devices
Patent Title (中): 嵌入式纳米UV阻挡和扩散屏障，提高铜/超低K层间电介质电子器件的可靠性
Application No.: US11564358

Application Date: 2006-11-29
Publication No.: US07749892B2

Publication Date: 2010-07-06
Inventor: Griselda Bonilla , Christos D. Dimitrakopoulos , Son V. Nguyen , Alfred Grill , Satyanarayana V. Nitta , Darryl D. Restaino , Terry A. Spooner
Applicant: Griselda Bonilla , Christos D. Dimitrakopoulos , Son V. Nguyen , Alfred Grill , Satyanarayana V. Nitta , Darryl D. Restaino , Terry A. Spooner
Applicant Address: US NY Armonk
Assignee: International Business Machines Corporation
Current Assignee: International Business Machines Corporation
Current Assignee Address: US NY Armonk
Agent Graham S. Jones; H. Daniel Schnurmann
Main IPC: H01L21/4763
IPC: H01L21/4763

Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devices

Abstract:

An interconnect in provided which comprises a copper conductor having both a top surface and a lower surface, with caps formed on the top surface of the metallic conductor. The cap is formed of dual laminations or multiple laminations of films with the laminated films including an Ultra-Violet (UV) blocking film and a diffusion barrier film. The diffusion barrier film and the UV blocking film may be separated by an intermediate film.

Abstract(Chinese):

提供的互连，其包括具有顶表面和下表面的铜导体，其中帽形成在金属导体的顶表面上。盖由双层叠或多层薄膜形成，层压膜包括超紫（UV）阻挡膜和扩散阻挡膜。扩散阻挡膜和UV阻挡膜可以通过中间膜分离。

Public/Granted literature

US20080122103A1 EMBEDDED NANO UV BLOCKING BARRIER FOR IMPROVED RELIABILITY OF COPPER/ULTRA LOW K INTERLEVEL DIELECTRIC ELECTRONIC DEVICES Public/Granted day:2008-05-29

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）