Method of manufacturing semiconductor device

Invention Grant

US07749897B2 Method of manufacturing semiconductor device 有权

Title translation: 制造半导体器件的方法

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Patent Title: Method of manufacturing semiconductor device
Patent Title (中): 制造半导体器件的方法
Application No.: US12219271

Application Date: 2008-07-18
Publication No.: US07749897B2

Publication Date: 2010-07-06
Inventor: Ken Sugimoto , Yoshiyuki Ohkura , Hirofumi Watatani , Tamotsu Owada , Shunn-ichi Fukuyama
Applicant: Ken Sugimoto , Yoshiyuki Ohkura , Hirofumi Watatani , Tamotsu Owada , Shunn-ichi Fukuyama
Applicant Address: JP Yokohama
Assignee: Fujitsu Semiconductor Limited
Current Assignee: Fujitsu Semiconductor Limited
Current Assignee Address: JP Yokohama
Agency: Westerman, Hattori, Daniels & Adrian, LLP
Priority: JP2005-344263 20051129
Main IPC: H01L21/4763
IPC: H01L21/4763

Method of manufacturing semiconductor device

Abstract:

A method of manufacturing a semiconductor device comprising a wiring structure that includes a vertical wiring section is disclosed. The method comprises a step of forming an interlayer insulation film made of a low dielectric constant material on a wiring layer, a step of forming a silicon oxide film by CVD using SiH4 gas and CO2 gas on the interlayer insulation film, a step of forming a chemically amplified resist film to cover the silicon oxide film, and a step of forming a first opening in a position on the chemically amplified resist film where the vertical wiring section is to be formed.

Abstract(Chinese):

公开了一种制造包括垂直布线部分的布线结构的半导体器件的方法。该方法包括在布线层上形成由低介电常数材料制成的层间绝缘膜的步骤，通过在层间绝缘膜上使用SiH 4气体和CO 2气体通过CVD形成氧化硅膜的步骤，形成化学放大抗蚀剂膜覆盖氧化硅膜，以及在要形成垂直布线部分的化学放大抗蚀剂膜上的位置形成第一开口的步骤。

Public/Granted literature

US20080305645A1 Method of manufacturing semiconductor device Public/Granted day:2008-12-11

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）