A method for forming an interconnect structure includes forming a dielectric layer above a first layer having a conductive region defined therein. An opening is defined in the dielectric layer to expose at least a portion of the conductive region. A metal silicide is formed in the opening to define the interconnect structure. A semiconductor device includes a first layer having a conductive region defined therein, a dielectric layer formed above the first layer, and a metal silicide interconnect structure extending through the dielectric layer to communicate with the conductive region.