Invention Grant
US07750059B2 Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure
失效
用于纳米压印光刻的聚合物溶液,以减少压印温度和压力
- Patent Title: Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure
- Patent Title (中): 用于纳米压印光刻的聚合物溶液,以减少压印温度和压力
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Application No.: US10313596Application Date: 2002-12-04
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Publication No.: US07750059B2Publication Date: 2010-07-06
- Inventor: Gun Young Jung , Sivapackia Ganapathiappan , Yong Chen , R. Stanley Williams
- Applicant: Gun Young Jung , Sivapackia Ganapathiappan , Yong Chen , R. Stanley Williams
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Agent David W. Collins
- Main IPC: B29C35/08
- IPC: B29C35/08

Abstract:
A method of forming features on substrates by imprinting is provided. The method comprises: (a) forming a polymer solution comprising at least one polymer dissolved in at least one polymerizable monomer; and (b) depositing the polymer solution on a substrate to form a liquid film thereon; and then either: (c) curing the liquid film by causing the monomer(s) to polymerize and optionally cross-linking the polymer(s) to thereby form a polymer film, the polymer film having a glass transition temperature (Tg); and imprinting the polymer film with a mold having a desired pattern to form a corresponding negative pattern in the polymer film, or (d) imprinting the liquid film with the mold and curing it to form the polymer film. The temperature of imprinting is as little as 10° C. above the Tg, or even less if the film is in the liquid state. The pressure of the imprinting can be within the range of 100 to 500 psi.
Public/Granted literature
- US20040110856A1 Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure Public/Granted day:2004-06-10
Information query
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