Invention Grant
- Patent Title: Insulating film for semiconductor integrated circuit
- Patent Title (中): 半导体集成电路绝缘膜
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Application No.: US12026865Application Date: 2008-02-06
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Publication No.: US07750102B2Publication Date: 2010-07-06
- Inventor: Yasufumi Watanabe , Katsuyuki Watanabe
- Applicant: Yasufumi Watanabe , Katsuyuki Watanabe
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-026547 20070206
- Main IPC: C08F38/00
- IPC: C08F38/00 ; C08F4/80

Abstract:
The present invention relates to a polymeric compound comprising, as structural units, groups each represented by the following general formula (1); and an insulating film for a semiconductor integrated circuit which comprises the polymeric compound: —R1—C≡C—C≡C—, wherein R1 represents a group having a cage-shaped structure. The insulating film has a high heat resistance, a high mechanical strength and a low dielectric constant. In addition, the insulating film has a high stability of its dielectric constant with the elapse of time. Furthermore, the present invention can provide an interlayer insulating film for electronic devices having a high heat resistance, a high mechanical strength and a low dielectric constant which can be maintained over an extremely long period of time as well as an electronic device whose layer structure is provided with such an insulating film as a constituent thereof.
Public/Granted literature
- US20080251892A1 INSULATING FILM FOR SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2008-10-16
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