Invention Grant
US07750370B2 High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer
有权
在保护电介质层上具有自对准微型场缓和板的高电子迁移率晶体管
- Patent Title: High electron mobility transistor having self-aligned miniature field mitigating plate on a protective dielectric layer
- Patent Title (中): 在保护电介质层上具有自对准微型场缓和板的高电子迁移率晶体管
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Application No.: US12003098Application Date: 2007-12-20
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Publication No.: US07750370B2Publication Date: 2010-07-06
- Inventor: Ioulia Smorchkova , Robert Coffie , Ben Heying , Carol Namba , Po-Hsin Liu , Boris Hikin
- Applicant: Ioulia Smorchkova , Robert Coffie , Ben Heying , Carol Namba , Po-Hsin Liu , Boris Hikin
- Applicant Address: US CA Los Angeles
- Assignee: Northrop Grumman Space & Mission Systems Corp.
- Current Assignee: Northrop Grumman Space & Mission Systems Corp.
- Current Assignee Address: US CA Los Angeles
- Agency: Posz Law Group, PLC
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/338
Abstract:
A semiconductor device is fabricated to include source and drain contacts including an ohmic metal sunken into the barrier layer and a portion of the channel layer; a protective dielectric layer disposed between the source and drain contacts on the barrier layer; a metallization layer disposed in drain and source ohmic vias between the source contact and the protective dielectric layer and between the protective dielectric layer and the drain contact; and a metal T-gate disposed above the barrier layer including a field mitigating plate disposed on a side portion of a stem of the metal T-gate.
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