Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors

Invention Grant

US07750377B2 Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors 失效

Title translation: 垂直结场效应晶体管，以及垂直结型场效应晶体管的制造方法

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Patent Title: Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors
Patent Title (中): 垂直结场效应晶体管，以及垂直结型场效应晶体管的制造方法
Application No.: US11770414

Application Date: 2007-06-28
Publication No.: US07750377B2

Publication Date: 2010-07-06
Inventor: Takashi Hoshino , Shin Harada , Kazuhiro Fujikawa , Satoshi Hatsukawa , Kenichi Hirotsu
Applicant: Takashi Hoshino , Shin Harada , Kazuhiro Fujikawa , Satoshi Hatsukawa , Kenichi Hirotsu
Applicant Address: JP Osaka
Assignee: Sumitomo Electric Industries, Ltd.
Current Assignee: Sumitomo Electric Industries, Ltd.
Current Assignee Address: JP Osaka
Agency: Fish & Richardson P.C.
Priority: JPP2002-215804 20020724; JPP2002-235045 20020812
Main IPC: H01L29/80
IPC: H01L29/80

Vertical junction field effect transistors, and methods of producing the vertical junction field effect transistors

Abstract:

A vertical JFET 1a according to the present invention has an n+ type drain semiconductor portion 2, an n-type drift semiconductor portion 3, a p+ type gate semiconductor portion 4, an n-type channel semiconductor portion 5, an n+ type source semiconductor portion 7, and a p+ type gate semiconductor portion 8. The n-type drift semiconductor portion 3 is placed on a principal surface of the n+ type drain semiconductor portion 2 and has first to fourth regions 3a to 3d extending in a direction intersecting with the principal surface. The p+ type gate semiconductor portion 4 is placed on the first to third regions 3a to 3c of the n-type drift semiconductor portion 3. The n-type channel semiconductor portion 5 is placed along the p+ type gate semiconductor portion 4 and is electrically connected to the fourth region 3d of the n-type drift semiconductor portion 3.

Abstract(Chinese):

根据本发明的垂直JFET 1a具有n +型漏极半导体部分2，n型漂移半导体部分3，p +型栅极半导体部分4，n型沟道半导体部分5，n +型源半导体部分 7和p +型栅极半导体部分8.n型漂移半导体部分3放置在n +型漏极半导体部分2的主表面上，并且具有在与主体相交的方向上延伸的第一至第四区域3a至3d 表面。 p +型栅极半导体部分4放置在n型漂移半导体部分3的第一至第三区域3a至3c上.n型沟道半导体部分5沿着p +型栅极半导体部分4放置并且电连接到n型漂移半导体部分3的第四区域3d。

Public/Granted literature

US20070278540A1 Vertical Junction Field Effect Transistors, and Methods of Producing the Vertical Junction Field Effect Transistors Public/Granted day:2007-12-06

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/80	.....由PN结或其他整流结栅产生场效应的