Invention Grant
- Patent Title: Spin fet and spin memory
- Patent Title (中): 旋转胎儿和旋转记忆
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Application No.: US11610100Application Date: 2006-12-13
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Publication No.: US07750390B2Publication Date: 2010-07-06
- Inventor: Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
- Applicant: Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-009266 20060117
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94
Abstract:
A spin FET according to an example of the present invention includes a magnetic pinned layer whose magnetization direction is fixed, a magnetic free layer whose magnetization direction is changed, a channel between the magnetic pinned layer and the magnetic free layer, a gate electrode provided on the channel via a gate insulation layer, and a multiferroric layer which is provided on the magnetic free layer, and whose magnetization direction is changed by an electric field.
Public/Granted literature
- US20070164336A1 SPIN FET AND SPIN MEMORY Public/Granted day:2007-07-19
Information query
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