Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11812534Application Date: 2007-06-19
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Publication No.: US07750403B2Publication Date: 2010-07-06
- Inventor: Yutaka Shionoiri , Takuro Ohmaru
- Applicant: Yutaka Shionoiri , Takuro Ohmaru
- Applicant Address: unknown Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee Address: unknown Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-181374 20060630
- Main IPC: H01L29/786
- IPC: H01L29/786

Abstract:
An individual identifier is easily provided in a semiconductor device capable of wireless communication. The semiconductor device includes a thin film transistor including a channel forming region, an island-like semiconductor film including a source region and a drain region, a gate insulating film, and a gate electrode; an interlayer insulating film; a plurality of contact holes formed in the interlayer insulating film which reach one of the source region and the drain region; and a single contact hole which reaches the other of the source region and the drain region, wherein a diameter of the single contact hole is larger than a diameter of each of the plurality of contact holes, and a sum of areas of bases of the plurality of contact holes is equal to an area of a base of the single contact hole.
Public/Granted literature
- US20080001228A1 Semiconductor device and manufacturing method thereof Public/Granted day:2008-01-03
Information query
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