Invention Grant
- Patent Title: Strapping contact for charge protection
- Patent Title (中): 带式触点用于充电保护
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Application No.: US11612265Application Date: 2006-12-18
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Publication No.: US07750407B2Publication Date: 2010-07-06
- Inventor: Wei Zheng , Jean Yang , Mark Randolph , Ming Kwan , Yi He , Zhizheng Liu , Meng Ding
- Applicant: Wei Zheng , Jean Yang , Mark Randolph , Ming Kwan , Yi He , Zhizheng Liu , Meng Ding
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76

Abstract:
A semiconductor device includes a substrate and a memory cell formed on the substrate. The memory cell includes a word line. The semiconductor device also includes a protection area formed in the substrate, a conductive structure configured to extend the word line to the protection area, and a contact configured to short the word line and the protection area.
Public/Granted literature
- US20080142889A1 STRAPPING CONTACT FOR CHARGE PROTECTION Public/Granted day:2008-06-19
Information query
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