Invention Grant
US07750417B2 Non-volatile semiconductor memory and method for fabricating a non-volatile semiconductor memory
失效
非挥发性半导体存储器和制造非易失性半导体存储器的方法
- Patent Title: Non-volatile semiconductor memory and method for fabricating a non-volatile semiconductor memory
- Patent Title (中): 非挥发性半导体存储器和制造非易失性半导体存储器的方法
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Application No.: US11832459Application Date: 2007-08-01
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Publication No.: US07750417B2Publication Date: 2010-07-06
- Inventor: Naohisa Iino , Yasuhiko Matsunaga , Fumitaka Arai
- Applicant: Naohisa Iino , Yasuhiko Matsunaga , Fumitaka Arai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-258523 20040906
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L27/112
Abstract:
A non-volatile semiconductor memory includes memory cell transistors arranged in a matrix, wherein each of the memory cell transistors is a depletion mode MIS transistor.
Public/Granted literature
- US20080169497A1 NON-VOLATILE SEMICONDUCTOR MEMORY AND METHOD FOR FABRICATING A NON-VOLATILE SEMICONDUCTOR MEMORY Public/Granted day:2008-07-17
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