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US07750423B2 Photoelectric conversion device, solid-state imaging device and manufacturing method of solid-state imaging device 有权
光电转换装置，固态成像装置以及固态成像装置的制造方法

  • Patent Title: Photoelectric conversion device, solid-state imaging device and manufacturing method of solid-state imaging device
  • Patent Title (中): 光电转换装置，固态成像装置以及固态成像装置的制造方法
  • Application No.: US11730434
    Application Date: 2007-04-02
  • Publication No.: US07750423B2
    Publication Date: 2010-07-06
  • Inventor: Daisuke Yokoyama
  • Applicant: Daisuke Yokoyama
  • Applicant Address: JP Tokyo
  • Assignee: FUJIFILM Corporation
  • Current Assignee: FUJIFILM Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2006-100627 20060331
  • Main IPC: H01L27/142
  • IPC: H01L27/142
Photoelectric conversion device, solid-state imaging device and manufacturing method of solid-state imaging device
Abstract:
A photoelectric conversion device comprising a lower electrode, an upper electrode opposing to the lower electrode and a photoelectric conversion layer provided between the lower electrode and the upper electrode, the photoelectric conversion device being for collecting a photocurrent upon application of a bias voltage between the lower electrode and the upper electrode, wherein the upper electrode works as an electrode in a light incident side, the upper electrode is transparent, and the lower electrode is a metallic electrode having a function to reflect light.
Abstract(Chinese):

一种光电转换装置，包括下电极，与下电极相对的上电极和设置在下电极和上电极之间的光电转换层，所述光电转换装置用于在下电极和下电极之间施加偏置电压时收集光电流 电极和上部电极，其中上部电极作为光入射侧的电极，上部电极是透明的，下部电极是具有反射光的功能的金属电极。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L27/00 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件（其零部件入H01L23/00，H01L29/00至H01L51/00；由多个单个固态器件组成的组装件入H01L25/00）
H01L27/14 .包括有对红外辐射、光、较短波长的电磁辐射或者微粒子辐射并且专门适用于把这样的辐射能转换为电能的，或适用于通过这样的辐射控制电能的半导体组件的（只与一个或多个电光源在结构上相结合的辐射敏感元件入H01L31/14；光导与光电元件的耦合入G02B6/42）
H01L27/142 ..能量转换器件（包括与光伏电池集成或者直接相关的旁路二极管的单个光伏电池的光伏模块或者阵列只入H01L31/0443；由沉积在同一衬底上的多个薄膜太阳能电池组成的光伏模块入H01L31/046）
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