Invention Grant
- Patent Title: Microelectronic assembly having second level interconnects including solder joints reinforced with crack arrester elements and method of forming same
- Patent Title (中): 具有二级互连的微电子组件,其包括用裂纹避雷器元件加强的焊点以及其形成方法
-
Application No.: US11852173Application Date: 2007-09-07
-
Publication No.: US07750466B2Publication Date: 2010-07-06
- Inventor: Timothy P. Rothman , Leo J. Craft , Dong W. Kim
- Applicant: Timothy P. Rothman , Leo J. Craft , Dong W. Kim
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L23/485
- IPC: H01L23/485

Abstract:
A microelectronic assembly and a method of forming the assembly. The microelectronic assembly includes a package having a package substrate having a die side and a carrier side, and substrate lands on the carrier side thereof; a microelectronic die mounted on the package substrate at the die side thereof; and an array of first level interconnects electrically coupling the die to the package substrate. The assembly further includes a carrier having a substrate side, the package being mounted on the carrier at the substrate side thereof; and an array of second level interconnects electrically coupling the package to the carrier, each of the second level interconnects including a solder joint connecting the substrate lands to the carrier lands, and a crack arrester element at least partially encompassed within the solder joint.
Public/Granted literature
Information query
IPC分类: