Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12032730Application Date: 2008-02-18
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Publication No.: US07750468B2Publication Date: 2010-07-06
- Inventor: Tatsuhiko Asakawa
- Applicant: Tatsuhiko Asakawa
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2007-037620 20070219
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device includes: a semiconductor substrate that has an integrated circuit, a passivation film formed above the integrated circuit, and an electrode electrically connected to the integrated circuit, the passivation film having an uneven surface, the electrode having at least a portion exposed through the passivation film; a first resin layer that is disposed on the passivation film; a second resin layer that covers the passivation film and the first resin layer; and a wiring that extends from the electrode to a first part of the second resin layer above the first resin layer, the electrode passing on a second part of the second resin layer above the passivation film.
Public/Granted literature
- US20080197505A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2008-08-21
Information query
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