Invention Grant
US07750470B2 Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement
有权
用于平坦化金属图案周围的介电层以实现光学效率提高的方法
- Patent Title: Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement
- Patent Title (中): 用于平坦化金属图案周围的介电层以实现光学效率提高的方法
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Application No.: US11703965Application Date: 2007-02-08
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Publication No.: US07750470B2Publication Date: 2010-07-06
- Inventor: Yeou-Lang Hsieh , Chin-Min Lin , Jiann-Jong Wang
- Applicant: Yeou-Lang Hsieh , Chin-Min Lin , Jiann-Jong Wang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: K&L Gates LLP
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A method and system for improving planarization and uniformity of dielectric layers for providing improved optical efficiency in CCD and CMOS image sensor devices. In various embodiments, a dielectric planarization method for achieving better optical efficiency includes first depositing a first dielectric having an optically transparent property on and around a metal pattern. Optical sensors are formed in or on the substrate in areas between metal features. The metal pattern protects a sensor situated therebetween and thereunder from electromagnetic radiation. After the first dielectric layer is polished using CMP, a slanted or inclined surface is produced but this non-uniformity is eliminated using further planarization processes that produce a uniform total dielectric thickness for the proper functioning of the sensor.
Public/Granted literature
- US20080191249A1 Methods for planarization of dielectric layer around metal patterns for optical efficiency enhancement Public/Granted day:2008-08-14
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