Embodiments relate to a dual metal interconnection structure of a semiconductor device and a method for manufacturing the same. In embodiments, the dual metal interconnection structure may include a contact plug selectively formed in an interlayer dielectric, which covers a silicon substrate, and contacted with an active area of the silicon substrate, a first aluminum interconnection formed on one contact plug in every two cells and having a width larger than a width of the contact plug, a dielectric wrapping an upper surface and a side plane of the first aluminum interconnection, and a second aluminum interconnection formed on one contact plug in every two cells alternatively with the first aluminum interconnection, insulated from the first aluminum interconnection by the dielectric, and having a width larger than a width of the contact plug. The dual metal interconnection structure may be formed by performing an interconnection process two times, and a width of the interconnection and a gap between interconnections may be increased.