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US07750533B2 Surface acoustic wave (SAW) device, module and oscillator for improving a Q factor 失效
表面声波（SAW）器件，模块和振荡器，用于提高Q因子

  • Patent Title: Surface acoustic wave (SAW) device, module and oscillator for improving a Q factor
  • Patent Title (中): 表面声波（SAW）器件，模块和振荡器，用于提高Q因子
  • Application No.: US11922408
    Application Date: 2006-06-15
  • Publication No.: US07750533B2
    Publication Date: 2010-07-06
  • Inventor: Takuya Owaki , Takao Morita
  • Applicant: Takuya Owaki , Takao Morita
  • Applicant Address: JP Tokyo
  • Assignee: Epson Toyocom Corporation
  • Current Assignee: Epson Toyocom Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: Oliff & Berridge, PLC
  • Priority: JP2005-180329 20050621
  • International Application: PCT/JP2006/312464 WO 20060615
  • International Announcement: WO2006/137464 WO 20061228
  • Main IPC: H03H9/125
  • IPC: H03H9/125
Surface acoustic wave (SAW) device, module and oscillator for improving a Q factor
Abstract:
[Problem] In a SAW device using a quartz crystal substrate, prevent the deterioration of Q factor due to the difference in the peak frequency between the radiation conductance of an IDT and the reflection coefficient of a reflector.[Means to Solve the Problem] A surface acoustic wave (SAW) device includes a piezoelectric substrate made of a quartz crystal flat plate where a cut angle of a rotated Y-cut quartz substrate is set in −64.0°
Abstract(Chinese):

[问题]在使用石英晶体基板的SAW器件中，防止IDT的辐射电导与反射器的反射系数之间的峰值频率的差异导致的Q因子的劣化。 解决问题的手段表面声波（SAW）装置包括由石英晶体平板制成的压电基板，其中旋转的Y切割石英基板的切割角度设置在-64.0°<-49.3° 具有晶体Z轴，并且表面声波的传播方向用晶体X轴设置在90°±5°，形成在压电基板上的叉指式换能器（IDT）和设置在IDT两侧的反射器， 其中激发波为SH波，由IDT的波长归一化的电极膜厚度“H /λ”为0.05＆lt; lE; H /λ＆nlE; 0.07其中“λ”是激发SAW的波长， IDT与反射体之间的电极间距“Lt / Lr”设定为满足下式：31.50×（H /λ）2-4.435×（H /λ）+ 1.133＆nlE; Lt / Lr＆nlE; -3.000×（H /λ)2+0.500×(H/λ)+0.9796其中“Lt”是IDT的电极间距，“Lr”是反射器的电极间距。

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